? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 82 a i dm t c = 25 c, pulse width limited by t jm 240 a i a t c = 25 c 82a e as t c = 25 c4j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 1560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n/lb. weight 10 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 600 v v gs(th) v ds = v gs , i d = 8ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 75 m hiperfet tm power mosfet q3-class IXFB82N60Q3 ds100339(05/11) n-channel enhancement mode fast intrinsic rectifier features z low intrinsic gate resistance z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls advance technical information g = gate d = drain s = source tab = drain plus264 tm tab s g d v dss = 600v i d25 = 82a r ds(on) 75m t rr 300ns
IXFB82N60Q3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. plus264 tm (ixfb) outline symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = i d = 0.5 ? i d25 , note 1 33 55 s c iss 13.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1450 pf c rss 120 pf r gi gate input resistance 0.12 t d(on) 40 ns t r 13 ns t d(off) 60 ns t f 14 ns q g(on) 275 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = i d = 0.5 ? i d25 88 nc q gd 120 nc r thjc 0.08 c/w r thcs 0.13 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 82 a i sm repetitive, pulse width limited by t jm 330 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.9 c i rm 15.4 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 41a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2011 ixys corporation, all rights reserved IXFB82N60Q3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 01234567 v ds - volts i d - amperes v gs = 10v 8 v 7 v 6 v 5 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7 v 8 v 6 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10121416 v ds - volts i d - amperes 6 v 7v 5v v gs = 10v 8v 4v fig. 4. r ds(on) normalized to i d = 41a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 82a i d = 41a fig. 5. r ds(on) normalized to i d = 41a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 180 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFB82N60Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.30.50.70.91.11.31.51.7 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 300v i d = 41a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2011 ixys corporation, all rights reserved ixys ref: f_82n60q3(q9) 5-19-11 IXFB82N60Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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